全角度反射镜结构GaN基发光二极管及制作方法


Autoria(s): 许兴胜; 杜伟; 陈弘达
Data(s)

08/11/2006

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/3543

http://www.irgrid.ac.cn/handle/1471x/61253

Idioma(s)

中文

Fonte

许兴胜;杜伟;陈弘达,全角度反射镜结构GaN基发光二极管及制作方法,200510066898,20050430

Tipo

专利