利用离子束外延生长设备制备氮化铪薄膜材料的方法
| Data(s) |
31/05/2006
|
|---|---|
| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:57Z (GMT). No. of bitstreams: 1 full/200410009816.pdf: 1369436 bytes, checksum: b0aee9ccbc5595b7d355fc9472e92eb4 (MD5) Previous issue date: |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
杨少延;柴春林;刘志凯;陈涌海;陈诺夫;王占国,利用离子束外延生长设备制备氮化铪薄膜材料的方法,200410009816,20041118 |
| Tipo |
专利 |
