在硅衬底上生长氮化镓自支撑衬底材料的方法


Autoria(s): 刘祥林; 焦春美; 于英仪; 赵凤瑗
Data(s)

31/05/2006

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/3495

http://www.irgrid.ac.cn/handle/1471x/61229

Idioma(s)

中文

Fonte

刘祥林;焦春美;于英仪;赵凤瑗,在硅衬底上生长氮化镓自支撑衬底材料的方法,200410009858,20041125

Tipo

专利