制备绝缘体上锗硅薄膜材料的方法
| Data(s) |
31/05/2006
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:56Z (GMT). No. of bitstreams: 1 full/200410009861.pdf: 379779 bytes, checksum: 9364bd1f6ce8322ab09460f9d6f5c8c2 (MD5) Previous issue date: |
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| Idioma(s) |
中文 |
| Fonte |
刘超;高兴国;李建平;曾一平,制备绝缘体上锗硅薄膜材料的方法,200410009861,20041125 |
| Tipo |
专利 |
