提高氮化镓基高电子迁移率晶体管性能的结构及制作方法
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07/06/2006
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:56Z (GMT). No. of bitstreams: 1 full/200410009922.pdf: 671855 bytes, checksum: cdc01d78e3f86b07cfce0c9dc8ae8b91 (MD5) Previous issue date: |
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| Idioma(s) |
中文 |
| Fonte |
王翠梅;王晓亮;胡国新;王军喜;李建平;曾一平,提高氮化镓基高电子迁移率晶体管性能的结构及制作方法,200410009922,20041202 |
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专利 |
