双异质结构氮化镓基高电子迁移率晶体管结构及制作方法
| Data(s) |
14/06/2006
|
|---|---|
| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:55Z (GMT). No. of bitstreams: 1 full/200410009990.pdf: 850232 bytes, checksum: 77af6ab6a8753aeb01402d3fa643b10a (MD5) Previous issue date: |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
王晓亮;王翠梅;胡国新;王军喜;李建平;曾一平;李晋闽,双异质结构氮化镓基高电子迁移率晶体管结构及制作方法,200410009990,20041209 |
| Tipo |
专利 |
