单相钆硅化合物以及制备方法


Autoria(s): 李艳丽; 陈诺夫; 杨少延; 刘志凯
Data(s)

10/05/2006

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/3469

http://www.irgrid.ac.cn/handle/1471x/61216

Idioma(s)

中文

Fonte

李艳丽;陈诺夫;杨少延;刘志凯,单相钆硅化合物以及制备方法,200410088508,20041103

Tipo

专利