同一半导体芯片不同周期全息光栅的制作方法


Autoria(s): 谢红云; 王圩; 王宝军; 周帆
Data(s)

10/05/2006

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08

Made available in DSpace on 2009-06-11T08:57:55Z (GMT). No. of bitstreams: 1 full/200410088728.pdf: 617942 bytes, checksum: 5f681363294e44292e728b3989c0220e (MD5) Previous issue date:

Identificador

http://ir.semi.ac.cn/handle/172111/3465

http://www.irgrid.ac.cn/handle/1471x/61214

Idioma(s)

中文

Fonte

谢红云;王圩;王宝军;周帆,同一半导体芯片不同周期全息光栅的制作方法,200410088728,20041101

Tipo

专利