磁性半导体镓锰锑单晶热平衡生长方法


Autoria(s): 陈晨龙; 陈诺夫; 吴金良
Data(s)

17/05/2006

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/3459

http://www.irgrid.ac.cn/handle/1471x/61211

Idioma(s)

中文

Fonte

陈晨龙;陈诺夫;吴金良,磁性半导体镓锰锑单晶热平衡生长方法,200410094647,20041111

Tipo

专利