倒装氮化镓基发光二极管芯片的制作方法
| Data(s) |
31/05/2006
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:54Z (GMT). No. of bitstreams: 1 full/200410095294.pdf: 531083 bytes, checksum: c1abe1057902d05e1542d17ac2560359 (MD5) Previous issue date: |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
李丙乾;张书明;杨辉,倒装氮化镓基发光二极管芯片的制作方法,200410095294,20041119 |
| Tipo |
专利 |
