制备稀磁半导体Ga
| Data(s) |
21/06/2006
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:53Z (GMT). No. of bitstreams: 1 full/200410098932.pdf: 245967 bytes, checksum: ec0ff46b285db71b0d1febb8a6bee6d4 (MD5) Previous issue date: |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
陈晨龙;陈诺夫;吴金良,制备稀磁半导体Ga |
| Tipo |
专利 |
