硅衬底上高介电常数氧化铝介电薄膜材料及制备方法
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21/06/2006
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:53Z (GMT). No. of bitstreams: 1 full/200410098934.pdf: 514400 bytes, checksum: 595b40aee90471464fec81e4848effe5 (MD5) Previous issue date: |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
王启元;王俊;王建华,硅衬底上高介电常数氧化铝介电薄膜材料及制备方法,200410098934,20041216 |
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专利 |
