共振遂穿二极管与高电子迁移率晶体管器件制作方法


Autoria(s): 黄应龙; 杨富华; 王良臣; 王建林; 伊小燕; 马龙
Data(s)

26/07/2006

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/3409

http://www.irgrid.ac.cn/handle/1471x/61186

Idioma(s)

中文

Fonte

黄应龙;杨富华;王良臣;王建林;伊小燕;马龙,共振遂穿二极管与高电子迁移率晶体管器件制作方法,200510004572,20050118

Tipo

专利