大面积制备二氧化硅或者硅纳米线的控制生长方法


Autoria(s): 王晓欣; 王启明
Data(s)

26/07/2006

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/3407

http://www.irgrid.ac.cn/handle/1471x/61185

Idioma(s)

中文

Fonte

王晓欣;王启明,大面积制备二氧化硅或者硅纳米线的控制生长方法,200510004573,20050118

Tipo

专利