半导体芯片结深的电解水阳极氧化显结方法
| Data(s) |
02/08/2006
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:51Z (GMT). No. of bitstreams: 1 full/200510006262.pdf: 524995 bytes, checksum: dda8f938cda7f07c8680c9edc0df37b5 (MD5) Previous issue date: |
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| Idioma(s) |
中文 |
| Fonte |
曾宇昕;王水凤;杨富华;曾庆城,半导体芯片结深的电解水阳极氧化显结方法,200510006262,20050127 |
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专利 |
