一种在硅衬底上生长无裂纹Ⅲ族氮化物的方法
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30/08/2006
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:51Z (GMT). No. of bitstreams: 1 full/200510009509.pdf: 635217 bytes, checksum: 86cb2bac73aa4facf2c801c29274276c (MD5) Previous issue date: |
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| Idioma(s) |
中文 |
| Fonte |
吴洁君;韩修训;李杰民;黎大兵;陆沅;王晓晖,一种在硅衬底上生长无裂纹Ⅲ族氮化物的方法,200510009509,20050222 |
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专利 |
