一种提高霍尔器件抗静电击穿能力的方法


Autoria(s): 郑一阳; 韩海; 景士平; 梁平
Data(s)

22/10/2003

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/3341

http://www.irgrid.ac.cn/handle/1471x/61152

Idioma(s)

中文

Fonte

郑一阳;韩海;景士平;梁平,一种提高霍尔器件抗静电击穿能力的方法,CN02116447,20020405

Tipo

专利