双栅MOS器件


Autoria(s): 林雨; 陆文兰; 王志英
Data(s)

31/05/1989

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08

Made available in DSpace on 2009-06-11T08:57:44Z (GMT). No. of bitstreams: 1 full/88220839.pdf: 180384 bytes, checksum: b2b1b653f4f675d5582239cac5195f20 (MD5) Previous issue date:

Identificador

http://ir.semi.ac.cn/handle/172111/3229

http://www.irgrid.ac.cn/handle/1471x/61096

Idioma(s)

中文

Fonte

林雨;陆文兰;王志英,双栅MOS器件 ,CN88220839.X,19881215

Tipo

专利