在Si基片上生长高密度超小型Ge量子点的方法
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15/03/2006
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:43Z (GMT). No. of bitstreams: 1 full/200410074362.pdf: 415954 bytes, checksum: c90f0f139a92214a6ba2d6ee2712aad1 (MD5) Previous issue date: |
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| Idioma(s) |
中文 |
| Fonte |
时文华;李传波;王容伟;罗丽萍;王启明,在Si基片上生长高密度超小型Ge量子点的方法 ,CN200410074362.1,20040910 |
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专利 |
