磷化铟基量子级联半导体激光器材料的结构及生长方法


Autoria(s): 郭瑜; 刘峰奇; 李成明; 刘俊岐; 王占国
Data(s)

01/03/2006

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08

Made available in DSpace on 2009-06-11T08:57:42Z (GMT). No. of bitstreams: 1 full/200410057151.pdf: 784971 bytes, checksum: cd9bcfa79724a5c71b328086b64f603c (MD5) Previous issue date:

Identificador

http://ir.semi.ac.cn/handle/172111/3187

http://www.irgrid.ac.cn/handle/1471x/61075

Idioma(s)

中文

Fonte

郭瑜;刘峰奇;李成明;刘俊岐;王占国,磷化铟基量子级联半导体激光器材料的结构及生长方法 ,CN200410057151.7,20040827

Tipo

专利