低温生长砷化镓式半导体可饱和吸收镜
| Data(s) |
01/02/2006
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:42Z (GMT). No. of bitstreams: 1 full/200410070110.pdf: 266334 bytes, checksum: c150a454d68362e69c387108ceb4194a (MD5) Previous issue date: |
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| Idioma(s) |
中文 |
| Fonte |
王勇刚;马骁宇,低温生长砷化镓式半导体可饱和吸收镜 ,CN200410070110.1,20040730 |
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专利 |
