铝镓氮/氮化镓高电子迁移率晶体管的制作方法
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01/02/2006
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:42Z (GMT). No. of bitstreams: 1 full/200410071058.pdf: 421630 bytes, checksum: 93082779f397952915810d0f92ada0e6 (MD5) Previous issue date: |
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| Idioma(s) |
中文 |
| Fonte |
王晓亮;胡国新;王军喜;王翠梅;曾一平;李晋闽,铝镓氮/氮化镓高电子迁移率晶体管的制作方法 ,CN200410071058.1,20040728 |
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专利 |
