降低磷离子注入（0001）取向的4H-碳化硅电阻率的方法
| Data(s) |
04/01/2006
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:41Z (GMT). No. of bitstreams: 1 full/200410049770.pdf: 511415 bytes, checksum: 610e952d771b31f424aae108bea02b39 (MD5) Previous issue date: |
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| Idioma(s) |
中文 |
| Fonte |
高欣;孙国胜;李晋闽;王雷;赵万顺,降低磷离子注入（0001）取向的4H-碳化硅电阻率的方法 ,CN200410049770.1,20040628 |
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专利 |
