高击穿电压的高电子迁移率晶体管
| Data(s) |
14/12/2005
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:40Z (GMT). No. of bitstreams: 1 full/200410046387.pdf: 435685 bytes, checksum: 01ce2770685271c7df07e24580daba63 (MD5) Previous issue date: |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
徐晓华;倪海桥;牛智川;贺正宏;王建林,高击穿电压的高电子迁移率晶体管 ,CN200410046387.0,20040608 |
| Tipo |
专利 |
