一种在硅衬底上生长高质量氮化铝的方法
| Data(s) |
14/12/2005
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:40Z (GMT). No. of bitstreams: 1 full/200410047945.pdf: 310142 bytes, checksum: 69b5c9c1c863e884c198c615a68ec52e (MD5) Previous issue date: |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
张南红;王晓亮;曾一平;肖红领;王军喜;刘宏新;李晋闽,一种在硅衬底上生长高质量氮化铝的方法 ,CN200410047945.5,20040611 |
| Tipo |
专利 |
