表面态驰豫区的半导体可饱和吸收镜


Autoria(s): 王勇刚; 马骁宇
Data(s)

07/12/2005

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/3133

http://www.irgrid.ac.cn/handle/1471x/61048

Idioma(s)

中文

Fonte

王勇刚;马骁宇,表面态驰豫区的半导体可饱和吸收镜 ,CN200410046063.7,20040603

Tipo

专利