氮化镓高电子迁移率晶体管的结构及制作方法
| Data(s) |
07/12/2005
|
|---|---|
| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:40Z (GMT). No. of bitstreams: 1 full/200410046195.pdf: 555940 bytes, checksum: 664bf822ba52b78982a4ebb415d50520 (MD5) Previous issue date: |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
王晓亮;胡国新;王军喜;曾一平;李晋闽,氮化镓高电子迁移率晶体管的结构及制作方法 ,CN200410046195.X,20040602 |
| Tipo |
专利 |
