生长高结晶质量氮化铟单晶外延膜的方法


Autoria(s): 肖红领; 王晓亮; 王军喜; 张南红; 刘宏新; 曾一平
Data(s)

07/12/2005

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/3127

http://www.irgrid.ac.cn/handle/1471x/61045

Idioma(s)

中文

Fonte

肖红领;王晓亮;王军喜;张南红;刘宏新;曾一平,生长高结晶质量氮化铟单晶外延膜的方法 ,CN200410046194.5,20040602

Tipo

专利