生长高阻氮化镓外延膜的方法


Autoria(s): 王晓亮; 胡国新; 王军喜; 冉军学; 曾一平; 李晋闽
Data(s)

07/12/2005

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08

Made available in DSpace on 2009-06-11T08:57:40Z (GMT). No. of bitstreams: 1 full/200410046039.pdf: 371455 bytes, checksum: af59ca5cddfa29020d7d79465120f699 (MD5) Previous issue date:

Identificador

http://ir.semi.ac.cn/handle/172111/3123

http://www.irgrid.ac.cn/handle/1471x/61043

Idioma(s)

中文

Fonte

王晓亮;胡国新;王军喜;冉军学;曾一平;李晋闽,生长高阻氮化镓外延膜的方法 ,CN200410046039.3,20040602

Tipo

专利