铟镓氮薄膜的快速填埋生长方法


Autoria(s): 韩培德; 刘祥林; 王晓晖; 陆大成
Data(s)

31/07/2002

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/3067

http://www.irgrid.ac.cn/handle/1471x/61015

Idioma(s)

中文

Fonte

韩培德;刘祥林;王晓晖;陆大成,铟镓氮薄膜的快速填埋生长方法 ,CN00136136.8,20001225

Tipo

专利