采用TEOS源PECVD生长氧化硅厚膜的方法
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27/03/2002
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:37Z (GMT). No. of bitstreams: 1 full/00124309.pdf: 365156 bytes, checksum: 2b5011d95991a84e5a81541b28b2d4df (MD5) Previous issue date: |
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| Idioma(s) |
中文 |
| Fonte |
雷红兵;王红杰;胡雄伟;邓晓清;王启明,采用TEOS源PECVD生长氧化硅厚膜的方法 ,CN00124309.8,20000904 |
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专利 |
