高电子迁移率晶体管及其制作方法
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12/12/2001
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:36Z (GMT). No. of bitstreams: 1 full/00109356.pdf: 523860 bytes, checksum: 0fd9b4d10cd48767225177a482fe95a4 (MD5) Previous issue date: |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
潘钟,高电子迁移率晶体管及其制作方法 ,CN00109356.8,20000531 |
| Tipo |
专利 |
