一种生长氮化镓及其化合物薄膜的方法


Autoria(s): 韩培德
Data(s)

04/04/2001

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08

Made available in DSpace on 2009-06-11T08:57:36Z (GMT). No. of bitstreams: 1 full/99119773.pdf: 495237 bytes, checksum: e5fcddfbab26a5aca8bc43e686fd1b1f (MD5) Previous issue date:

Identificador

http://ir.semi.ac.cn/handle/172111/3035

http://www.irgrid.ac.cn/handle/1471x/60999

Idioma(s)

中文

Fonte

韩培德,一种生长氮化镓及其化合物薄膜的方法 ,CN99119773.9,19990928

Tipo

专利