一种制备半导体衬底的方法


Autoria(s): 杨沁清; 李成; 欧海燕; 王红杰; 王启明
Data(s)

04/04/2001

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/3033

http://www.irgrid.ac.cn/handle/1471x/60998

Idioma(s)

中文

Fonte

杨沁清;李成;欧海燕;王红杰;王启明,一种制备半导体衬底的方法 ,CN99119469.1,19990927

Tipo

专利