制造半导体双极器件的方法


Autoria(s): 徐嘉东; 李建明; 张秀兰
Data(s)

07/09/2005

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08

Made available in DSpace on 2009-06-11T08:57:31Z (GMT). No. of bitstreams: 1 full/200410007873.pdf: 214994 bytes, checksum: 40fc409100e1fbda29f425b520410031 (MD5) Previous issue date:

Identificador

http://ir.semi.ac.cn/handle/172111/2935

http://www.irgrid.ac.cn/handle/1471x/60949

Idioma(s)

中文

Fonte

徐嘉东;李建明;张秀兰,制造半导体双极器件的方法 ,CN200410007873.1,20040303

Tipo

专利