硅基可协变衬底上生长三族氮化物的方法


Autoria(s): 张宝顺; 杨辉
Data(s)

20/10/2004

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/2909

http://www.irgrid.ac.cn/handle/1471x/60936

Idioma(s)

中文

Fonte

张宝顺;杨辉,硅基可协变衬底上生长三族氮化物的方法 ,CN03123142.X,20030417

Tipo

专利