无破坏性检测高电子迁移率晶体管外延材料性能的方法


Autoria(s): 崔利杰; 曾一平; 王保强; 朱战平
Data(s)

06/10/2004

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/2903

http://www.irgrid.ac.cn/handle/1471x/60933

Idioma(s)

中文

Fonte

崔利杰;曾一平;王保强;朱战平,无破坏性检测高电子迁移率晶体管外延材料性能的方法 ,CN03107705.6,20030402

Tipo

专利