无破坏性检测高电子迁移率晶体管外延材料性能的方法
Data(s) |
06/10/2004
|
---|---|
Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:29Z (GMT). No. of bitstreams: 1 full/03107705.pdf: 350683 bytes, checksum: 1a2634466b691a4f64060a9157130689 (MD5) Previous issue date: |
Identificador | |
Idioma(s) |
中文 |
Fonte |
崔利杰;曾一平;王保强;朱战平,无破坏性检测高电子迁移率晶体管外延材料性能的方法 ,CN03107705.6,20030402 |
Tipo |
专利 |