氮化镓基发光二极管N型层欧姆接触电极的制作方法
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01/09/2004
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:29Z (GMT). No. of bitstreams: 1 full/03106434.pdf: 325286 bytes, checksum: e5b17137697b25033ba75e3fd4d74b1b (MD5) Previous issue date: |
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| Idioma(s) |
中文 |
| Fonte |
杨辉;张书明,氮化镓基发光二极管N型层欧姆接触电极的制作方法 ,CN03106434.5,20030225 |
| Tipo |
专利 |
