氮化镓及其化合物半导体的横向外延生长方法
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21/04/2004
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:57:27Z (GMT). No. of bitstreams: 1 full/02145890.pdf: 660555 bytes, checksum: e037db56c3fefdc2d6bb773bc8feda6d (MD5) Previous issue date: |
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| Idioma(s) |
中文 |
| Fonte |
冯淦;杨辉;梁骏吾,氮化镓及其化合物半导体的横向外延生长方法 ,CN02145890.1,20021016 |
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专利 |
