制作半导体台面侧向电流限制结构的技术


Autoria(s): 王圩; 王志杰; 张济志; 朱洪亮
Data(s)

14/05/1997

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/2829

http://www.irgrid.ac.cn/handle/1471x/60896

Idioma(s)

中文

Fonte

王圩;王志杰;张济志;朱洪亮,制作半导体台面侧向电流限制结构的技术 ,CN96109615.2,19960905

Tipo

专利