大计量离子注入法制备磁体/半导体混杂结构的方法


Autoria(s): 宋书林; 陈诺夫; 周剑平; 杨少延; 刘志凯; 柴春林
Data(s)

09/03/2005

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/2745

http://www.irgrid.ac.cn/handle/1471x/60854

Idioma(s)

中文

Fonte

宋书林;陈诺夫;周剑平;杨少延;刘志凯;柴春林,大计量离子注入法制备磁体/半导体混杂结构的方法 ,CN03155722.8,20030829

Tipo

专利