宽禁带半导体纳米结构中缺陷和掺杂特性研究
Contribuinte(s) |
李京波 |
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Data(s) |
2010
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Resumo |
Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-09-08T01:31:21Z No. of bitstreams: 1 王治国_博士后出站报告.pdf: 51512790 bytes, checksum: efccdb1a25bf8cdc9d51efe28a116ff4 (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-09-08T01:31:52Z (GMT) No. of bitstreams: 1 王治国_博士后出站报告.pdf: 51512790 bytes, checksum: efccdb1a25bf8cdc9d51efe28a116ff4 (MD5) Made available in DSpace on 2010-09-08T01:31:52Z (GMT). No. of bitstreams: 1 王治国_博士后出站报告.pdf: 51512790 bytes, checksum: efccdb1a25bf8cdc9d51efe28a116ff4 (MD5) Previous issue date: 2010 |
Identificador | |
Idioma(s) |
中文 |
Fonte |
王治国.宽禁带半导体纳米结构中缺陷和掺杂特性研究[博士后].北京.中国科学院研究生院.2010 |
Palavras-Chave | #半导体物理 |
Tipo |
学位论文 |