1.5 μm InGaAs 异变量子阱及InAs 单量子点光学性质的研究


Autoria(s): 马珊珊
Contribuinte(s)

孙宝权

Data(s)

2010

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/11257

http://www.irgrid.ac.cn/handle/1471x/60712

Idioma(s)

中文

Fonte

马珊珊.1.5 μm InGaAs 异变量子阱及InAs 单量子点光学性质的研究[博士].北京.中国科学院研究生院.2010

Palavras-Chave #半导体物理
Tipo

学位论文