GaN基高居里温度稀磁半导体的制备和性能研究


Autoria(s): 姜丽娟
Contribuinte(s)

王晓亮

Data(s)

2009

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-09-10T06:08:19Z (GMT). No. of bitstreams: 1 disk/eh2009/jlj.pdf: 1659892 bytes, checksum: ba9ed040e139cf4ec0c17db3d736dfa0 (MD5) Previous issue date: 2009

Identificador

http://ir.semi.ac.cn/handle/172111/6118

http://www.irgrid.ac.cn/handle/1471x/60619

Idioma(s)

中文

Fonte

姜丽娟.GaN基高居里温度稀磁半导体的制备和性能研究.[博士].北京.中国科学院半导体研究所.2009

Palavras-Chave #材料物理与化学
Tipo

学位论文