宽禁带半导体碳化硅(SiC)快速生长及多片大面积外延技术的研究
| Contribuinte(s) |
孙国胜 |
|---|---|
| Data(s) |
2009
|
| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z Made available in DSpace on 2009-04-13T11:45:31Z (GMT). Made available in DSpace on 2009-09-10T06:08:19Z (GMT). No. of bitstreams: 1 disk/eh2009/jigang.pdf: 4253836 bytes, checksum: d68925b03d4a95180d41a24b728956e9 (MD5) Previous issue date: 2009 |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
纪刚.宽禁带半导体碳化硅(SiC)快速生长及多片大面积外延技术的研究.[硕士].北京.中国科学院半导体研究所.2009 |
| Palavras-Chave | #材料物理与化学 |
| Tipo |
学位论文 |
