AlN 晶体的离子注入掺杂及缺陷研究


Autoria(s): 李巍巍
Contribuinte(s)

赵有文

Data(s)

2009

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-07-09T01:37:16Z (GMT). No. of bitstreams: 1 disk/eh2009/lww.pdf: 880191 bytes, checksum: 3f3a486a0ec2a518d300390f2c4945d3 (MD5) Previous issue date: 2009

Identificador

http://ir.semi.ac.cn/handle/172111/6047

http://www.irgrid.ac.cn/handle/1471x/60585

Idioma(s)

中文

Fonte

李巍巍.AlN 晶体的离子注入掺杂及缺陷研究.[硕士].北京.中国科学院半导体研究所.2009

Palavras-Chave #材料物理与化学
Tipo

学位论文