高频GaN 基HEMT 的设计与实现


Autoria(s): 陈志刚
Contribuinte(s)

杨富华

Data(s)

2008

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-07-09T01:37:03Z (GMT). No. of bitstreams: 1 disk/eh2008/czg.pdf: 1523344 bytes, checksum: c36e34c15169e82d6416229c522cfac1 (MD5) Previous issue date: 2008

Identificador

http://ir.semi.ac.cn/handle/172111/5919

http://www.irgrid.ac.cn/handle/1471x/60521

Idioma(s)

中文

Fonte

陈志刚.高频GaN 基HEMT 的设计与实现.[硕士].北京.中国科学院半导体研究所.2008

Palavras-Chave #微电子与固体电子学
Tipo

学位论文