GaN 基半导体材料的非线性光学性质研究


Autoria(s): 陈平
Contribuinte(s)

王启明

Data(s)

2008

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-07-09T01:37:03Z (GMT). No. of bitstreams: 1 disk/eh2008/cp.pdf: 7352661 bytes, checksum: 84d69e4896c92c5430f86f1d7b3f43e9 (MD5) Previous issue date: 2008

Identificador

http://ir.semi.ac.cn/handle/172111/5917

http://www.irgrid.ac.cn/handle/1471x/60520

Idioma(s)

中文

Fonte

陈平.GaN 基半导体材料的非线性光学性质研究.[博士].北京.中国科学院半导体研究所.2008

Palavras-Chave #微电子与固体电子学
Tipo

学位论文