AlGaN/GaN HEMT材料及微波功率器件研究
| Contribuinte(s) |
王晓亮 刘新宇 |
|---|---|
| Data(s) |
2008
|
| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z Made available in DSpace on 2009-04-13T11:45:31Z (GMT). Made available in DSpace on 2009-07-09T01:36:59Z (GMT). No. of bitstreams: 1 disk/eh2008/lwj.pdf: 3673162 bytes, checksum: fc666e442b5ece9d9388f73e09742d5c (MD5) Previous issue date: 2008 |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
罗卫军.AlGaN/GaN HEMT材料及微波功率器件研究.[博士].北京.中国科学院半导体研究所.2008 |
| Palavras-Chave | #微电子学与固体电子学 |
| Tipo |
学位论文 |
