InP、InAs和GaSb单晶材料缺陷和晶体完整性研究


Autoria(s): 吕小红
Contribuinte(s)

赵有文

Data(s)

2007

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-07-09T01:36:54Z (GMT). No. of bitstreams: 1 disk/eh2007/lxh.pdf: 1703177 bytes, checksum: 947808ca6d074c015a2ac0e7893ee95e (MD5) Previous issue date: 2007

Identificador

http://ir.semi.ac.cn/handle/172111/5831

http://www.irgrid.ac.cn/handle/1471x/60477

Idioma(s)

中文

Fonte

吕小红.InP、InAs和GaSb单晶材料缺陷和晶体完整性研究.[硕士].北京.中国科学院半导体研究所.2007

Palavras-Chave #材料物理与化学
Tipo

学位论文